| 摘要 |
<p>A rewritable nonvolatile semiconductor memory device having a plurality of memory cells which are electrically and reversably variable in threshold values and one pair of reference cells, provided for each predetermined number of memory cells, having the same cross-sectional structure as the memory cells, the pair of reference cells having written in them data of opposite phases, and, at the time of reading, the currents of the pair of reference cells being combined to produce a reference current and the data being determined by comparing this with the signal current of the memory cell. <IMAGE></p> |
