发明名称 |
Buried metal dual damascene plate capacitor |
摘要 |
A metal capacitor formed as part of metal dual damascene process in the BEOL, of a wafer. A lower plate (27) of the capacitor is sandwiched between an insulating layer (25) and a dielectric layer (29). The insulating layer on an opposite side abuts a layer of metalization (23, 24) and the dielectric layer separates the lower plate of the capacitor from an upper plate (59) of the capacitor. A portion (27A) of the lower plate projects into a via (37) adjacent to it that is filled with copper (63). The via projects up to a common surface with the upper plate but is electrically isolated form the upper plate. The via also extends down to the layer of metalization. |
申请公布号 |
GB2366077(B) |
申请公布日期 |
2005.01.19 |
申请号 |
GB20010005197 |
申请日期 |
2001.03.02 |
申请人 |
* INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ROBERT M * GEFFKEN;ANTHONY K * STAMPER;ROBERT M * GEFFKEN;ANTHONY K * STAMPER |
分类号 |
H01L21/3205;H01L21/02;H01L21/768;H01L21/822;H01L23/522;H01L27/04 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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