发明名称 Increased responsivity photodetector
摘要 <p>A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice. <IMAGE></p>
申请公布号 EP1498960(A2) 申请公布日期 2005.01.19
申请号 EP20040254127 申请日期 2004.07.09
申请人 TRIQUINT SEMICONDUCTOR, INC. 发明人 MAHAJAN, AADITYA;JIMENEZ, JOSE L.;BEAM EDWARD A. III;KETTERSON, ANDREW A.
分类号 H01L31/10;H01L31/00;H01L31/0304;H01L31/105;(IPC1-7):H01L31/105;H01L31/030 主分类号 H01L31/10
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