发明名称 |
Increased responsivity photodetector |
摘要 |
<p>A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice. <IMAGE></p> |
申请公布号 |
EP1498960(A2) |
申请公布日期 |
2005.01.19 |
申请号 |
EP20040254127 |
申请日期 |
2004.07.09 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
MAHAJAN, AADITYA;JIMENEZ, JOSE L.;BEAM EDWARD A. III;KETTERSON, ANDREW A. |
分类号 |
H01L31/10;H01L31/00;H01L31/0304;H01L31/105;(IPC1-7):H01L31/105;H01L31/030 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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