A method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions,申请号GB20020004128-传众专利搜索

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发明名称	A method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
摘要
申请公布号	GB2377785(B)	申请公布日期	2005.01.19
申请号	GB20020004128	申请日期	2002.02.21
申请人	* NEC RESEARCH INSTITUTE INC;* NEC LABORATORIES AMERICA, INC;* NEC CORPORATION;* TDK CORPORATION	发明人	DANIEL R. * HINES;STUART A. * SOLIN;TAO * ZHOU;JONATHAN E * MOUSSA;LAKSHMINARAYANAPURAM RAMDAS * RAM-MOHAN;JOHN M * SULLIVAN JR
分类号	H01L43/08;G06F17/50;(IPC1-7):G06F17/50	主分类号	H01L43/08
代理机构		代理人
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