| 发明名称 |
Method of fabricating group-III nitride semiconductor crystals. |
| 摘要 |
A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
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| 申请公布号 |
GB2372635(B) |
申请公布日期 |
2005.01.19 |
| 申请号 |
GB20020008076 |
申请日期 |
2001.08.17 |
| 申请人 |
* SHOWA DENKO K.K. |
发明人 |
YASUHITO * URASHIMA;MINEO * OKUYAMA;TETSUO * SAKURAI;HISAYUKI * MIKI |
| 分类号 |
C30B25/04;C30B25/02;C30B29/38;H01L21/20;H01L21/205;H01L33/06;H01L33/32;H01S5/323;H01S5/343;(IPC1-7):H01L21/205;H01L33/00 |
主分类号 |
C30B25/04 |
| 代理机构 |
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