Semiconductor device for use in a light valve device, and process for manufacturing the same

摘要

The present invention provides a semiconductor device for use in a light valve (e.g. in an LCD display) and a process for producing the same. The semiconductor device has a support layer (14,15) with transistor elements (5-7) provided thereon. The semiconductor device is characterised by a thin film layer (1) including a surface insulating film (3), a single crystal semiconductor thin film (4) disposed below said surface insulating film and having a source region (6), a drain region (7) and a channel forming region (5) for constituting each said transistor element, an insulating film (8) disposed on the side of the single crystal semiconductor thin film opposed to said surface insulating film for providing a gate insulator, an electrode film (9) disposed on the side of the insulating film opposed to said single crystal semiconductor thin film for providing a gate electrode of each said transistor element, and a back insulating film (10) disposed at least over the electrode film on the side thereof opposed to said insulating film, said support layer being fixedly adhered in face to face relation with said back insulating film. The process for manufacturing the device comprises a first step of forming an SOI substrate having a single crystal semiconductor thin film (22; Fig. 15) laminated on a tentative substrate (20) through an insulating film (21); a second step of forming a semiconductor integrated circuit for said single crystal semiconductor thin film; a third step of adhering a support substrate (24,25) fixedly in face to face relation with the surface of the semiconductor integrated circuit opposite the side of the tentative substrate; a fourth step of removing the tentative substrate to expose the insulating film (21) to the outside; and a fifth step of subjecting exposed surface of the insulating film to a treatment including at least the forming of an electrode.