| 摘要 |
A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-walphawAlx-ybetayOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than about 4 and equal to or less than about 13, alpha is a divalent cationic element having an ionic radius greater than divalent magnesium, and beta is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral and octahedral positions, and most of the magnesium and alpha occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, alpha and beta can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of a spinel composition. A composite includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
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