Light emitting semiconductor device and method of fabricating the same

摘要

A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression InxGayAlzN, wherein x+y+z=1, 0<=x<=1, 0<=y<=1, and 0<=z<=1. The silicon substrate has a groove having an oblique plane corresponding to a plane inclined relative to the substrate's main plane by 62 degrees or a plane inclined relative to the inclined plane in any direction within three degrees, and on the oblique plane a plurality or quantum well layers different in thickness are stacked.