发明名称 |
Precleaning method of precleaning a silicon nitride film forming system |
摘要 |
A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
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申请公布号 |
US6844273(B2) |
申请公布日期 |
2005.01.18 |
申请号 |
US20020066627 |
申请日期 |
2002.02.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO HITOSHI;FUKUSHIMA KOHEI;ENDO ATSUSHI;NISHITA TATSUO;KUMAGAI TAKESHI |
分类号 |
C23C16/34;C23C16/44;H01L21/318;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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