发明名称 Polymer, resist composition and patterning process
摘要 A polymer comprising recurring units of formula (1) wherein R<1 >is H or methyl, R<2 >is H or C1-8 alkyl, R<3 >is CO2R<4>, and R<4 >is C1-15 alkyl and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane structure or tetracyclo-[4.4.0.1<2,5>.1<7,10>]dodecane structure and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV
申请公布号 US6844133(B2) 申请公布日期 2005.01.18
申请号 US20020230341 申请日期 2002.08.29
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;HASEGAWA KOJI;KINSHO TAKESHI
分类号 G03F7/004;C08F36/00;G03F7/00;G03F7/038;G03F7/38;G03F7/40;(IPC1-7):G03F7/004 主分类号 G03F7/004
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