发明名称 |
Fabrication method of nitride-based semiconductors and nitride-based semiconductor fabricated thereby |
摘要 |
The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.
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申请公布号 |
US6844569(B1) |
申请公布日期 |
2005.01.18 |
申请号 |
US20040831190 |
申请日期 |
2004.04.26 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
LEE KYU HAN;KIM SUN WOON;KIM JE WON |
分类号 |
H01L21/3065;C30B29/60;H01L21/20;H01L21/205;H01L33/22;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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