发明名称 |
Chemically amplified resist material and patterning method using same |
摘要 |
A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.
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申请公布号 |
US6844135(B2) |
申请公布日期 |
2005.01.18 |
申请号 |
US20030614236 |
申请日期 |
2003.07.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
KON JUNICHI;NOZAKI KOJI;YANO EI |
分类号 |
G03F7/004;G03F7/038;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03C1/73 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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