发明名称 Method and layout for high density reticle
摘要 A method for making a reticle for use in a photolithography process is disclosed. The method includes forming at least two printable features and at least one sub-resolution connecting structure within the same layer of a reticle substrate, where the sub-resolution connecting structure connects at least two of the printable reticle features. The reticles themselves formed according to such methods as well as photolithographic processes using such a reticle are also disclosed. The reticle may be a binary mask, a phase shift mask, or an attenuated phase shift mask.
申请公布号 US6844118(B2) 申请公布日期 2005.01.18
申请号 US20020175832 申请日期 2002.06.21
申请人 MICRON TECHNOLOGY, INC. 发明人 STANTON WILLIAM
分类号 G03F1/00;G03F1/14;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/00
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