发明名称 |
METHOD FOR FORMING HYDROXYL MONOLAYER ON SUBSTRATE TO MAKE SILICON WAFER COATED WITH ONLY HYDROXIDE RADICAL |
摘要 |
PURPOSE: A method for forming a hydroxyl monolayer on a substrate is provided to make a silicon wafer coated with only a hydroxide radical by making chlorine absorbed to the surface of the silicon wafer in a high vacuum atmosphere and by replacing the chlorine with the hydroxide radical while using water. CONSTITUTION: A halogen element of a gas state is absorbed to the surface of a substrate in a high vacuum atmosphere. Water is supplied to the surface of the substrate to which a halogen element is absorbed in a high vacuum atmosphere so that the halogen element is replaced with the hydroxide radical by reaction of water molecules and the halogen element to form a hydroxyl monolayer.
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申请公布号 |
KR20050006516(A) |
申请公布日期 |
2005.01.17 |
申请号 |
KR20030046357 |
申请日期 |
2003.07.09 |
申请人 |
KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY |
发明人 |
AN, KI SEOK;BAIK, JAE YOON;KIM, YUN SOO;LEE, SUN SOOK |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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