| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee a growth of good MPS(meta-stable polysilicon) and secure a stable capacitance value by preventing the growth of MPS from being controlled by a carbon component generated by an etch-back process of a storage node polysilicon layer. CONSTITUTION: An interlayer dielectric including a storage node contact hole(37) is formed on a semiconductor substrate. A polysilicon layer is formed on the interlayer dielectric including the storage node contact hole. A sacrificial resist layer is formed on the polysilicon layer to fill the storage node contact hole. The sacrificial resist layer is selectively removed to be left only in the storage node contact hole. An ion implantation process is performed on the upper surface of the exposed polysilicon layer. After the remaining sacrificial resist layer is removed, the ion-implanted polysilicon layer is oxidized. After the oxidized polysilicon layer is removed, an MPS layer(47) is grown on the surface of the polysilicon layer. A dielectric layer and an upper electrode are formed on the polysilicon layer including the MPS layer.
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