METHOD FOR FORMING ACTIVE REGION OF SEMICONDUCTOR DEVICE TO INCREASE AREA OF ACTIVE REGION IN SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for forming an active region of a semiconductor device is provided to increase the area of an active region in a semiconductor substrate while uniformly maintaining an isolation interval in the substrate. CONSTITUTION: A trench(104) is formed in an isolation region of a semiconductor substrate(101). An isolation layer(107) is formed in the trench. A growth layer(108) is formed on the semiconductor substrate by a selective epitaxial growth process. The isolation layer having a depth lower than the surface of the semiconductor substrate is formed to expose the upper sidewall of the trench, wherein the growth layer is formed even on the upper sidewall of the trench by a selective epitaxial growth process.