FILM BULK ACOUSTIC RESONATOR FABRICATED BY USING LOCOS PROCESS AND METHOD FOR MANUFACTURING THE SAME, ESPECIALLY UTILIZING POLYSILICON OXIDE LAYER AS ETCHING STOP LAYER

摘要

PURPOSE: A film bulk acoustic resonator fabricated by using a LOCOS process and a method for manufacturing the same are provided to easily manufacture the FBAR of an air gap structure with an excellent and stable effective bandwidth. CONSTITUTION: A film bulk acoustic resonator fabricated by using a LOCOS process includes a substrate(100), a pair of poly silicon oxide layers(140a,140b), a membrane layer(130) and a stacked resonator(200). The insulation layer is deposited on the top surface of the substrate. The poly silicon oxide layers are deposited on both sides of the insulation layer except a predetermined portion. The membrane layer is positioned between the poly silicon oxide layers with interval from the top surface of the insulation layer by a predetermined distance. And, the stacked resonator is positioned on top of the membrane layer.