FLASH MEMORY DEVICE, ESPECIALLY REDUCING PROBABILITY OF ERROR GENERATED BY CHANGE OF POWER VOLTAGE

摘要

PURPOSE: A flash memory device is provided to reduce the probability of error generated according to the change of power voltage when the memory cell is programmed. CONSTITUTION: A flash memory device(300) includes a memory cell array(32), a bit line voltage setting circuit(36) and a variable bit line voltage generation circuit(38). The memory cell array is provided with a plurality of word lines, a plurality of bit lines and a plurality of memory cells arranged at the cross-sections between the plurality of word lines and the plurality of bit lines. The bit line voltage setting circuit set the bit line connected to the memory cell to be programmed as the variable bit line voltage or the ground voltage. And, the variable bit line voltage generation circuit generates the variable bit line voltage varied in response to the power voltage.