MAGNETIC TUNNEL JUNCTION IN MAGNETIC RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FORMING THE SAME, ESPECIALLY CONTROLLING TiN AMOUNT REMAINING AFTER CHEMICAL MECHANICAL POLISHING

摘要

PURPOSE: A magnetic tunnel junction in a magnetic random access memory device and a method for forming the same are provided to properly control the TiN amount remaining after the chemical mechanical polishing by forming the bottom electrode as a relatively low Ti-rich TiN. CONSTITUTION: A method for forming a magnetic tunnel junction in a magnetic random access memory device includes the steps of: forming a bottom electrode(100); forming an oxide layer(110) on the bottom electrode; and forming the magnetic tunnel junction(200). The magnetic tunnel is provided with a tunneling barrier(155a) grown in a direction equal to the maximum dense surface of the seed layer and a free layer(190) including at least two ferroelectric layers.