METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SINGLE DAMASCENE PROCESS

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to improve performance of the device by enhancing the structure of an MIM(Metal Insulator Metal) capacitor using a single damascene process. CONSTITUTION: A lower electrode(61a) and a lower metal line(61b) are formed on a semiconductor substrate(51). A first interlayer dielectric(63) is formed on the entire surface of the resultant structure. A first photoresist pattern for defining a capacitor region is formed thereon. A trench(65) for exposing the lower electrode to the outside is formed in the first interlayer dielectric by using the first photoresist pattern as an etching mask. A dielectric film(68) and an upper electrode(70) are completely filled in the trench.