SEMICONDUCTOR DEVICE FOR PREVENTING CHANNEL STOP IMPLANTATION LAYER FROM BEING FORMED IN ACTIVE REGION

摘要

PURPOSE: A semiconductor device is provided to improve deterioration in a transistor characteristic by preventing a channel stop implantation layer from being formed in an active region. CONSTITUTION: A semiconductor device includes a MOS transistor on an SOI layer of an SOI substrate. The SOI substrate is formed by sequentially stacking a semiconductor substrate(1), a buried insulating layer(2), and the SOI layer(3). The semiconductor device includes a random logic part and an SRAM part. The random logic part is electrically isolated by a partial separative oxide layer having the SOI layer. The SRAM part is electrically isolated by a complete separative oxide layer approaching the buried insulating layer through the SOI layer. The random logic part is formed on the SOI layer and includes a body region potential-fixable from the outside. The body region is in contact with the SOI layer under the partial separative oxide layer.