发明名称
摘要 A vertical heat treatment apparatus for semiconductor wafers (W) includes a heat treating furnace (19) which is heated to 600 DEG C or higher. In the heat treating furnace (19), the wafers (W) are subjected to batch treatment while they are placed on a boat (16). To the lower side of the heat treating furnace (19), a preparatory vacuum chamber (102) is airtightly connected. Disposed in the preparatory vacuum chamber (102) are a horizontally transfer mechanism (201) and a vertical transfer mechanism (202) for transferring the boat (16). The two transfer mechanisms (201 and 202) are supported by support members (29a and 33a) mounted on a mechanical base (28). The preparatory vacuum chamber (102) and the support members (29a and 33a) are airtightly connected to each other by means of bellows. <IMAGE>
申请公布号 KR100456711(B1) 申请公布日期 2005.01.15
申请号 KR19980705029 申请日期 1998.06.29
申请人 发明人
分类号 H01L21/22;B65G49/07;C23C16/54;C30B25/08;C30B31/10;C30B31/12;C30B35/00;H01L21/00;H01L21/205;H01L21/31;H01L21/324;H01L21/677 主分类号 H01L21/22
代理机构 代理人
主权项
地址