METHOD OF FORMING TUNGSTEN PLUG OF SEMICONDUCTOR DEVICE USING SELECTIVE TUNGSTEN DEPOSITION AND BLANKET TUNGSTEN DEPOSITION TOGETHER

摘要

PURPOSE: A method of forming a tungsten plug of a semiconductor device is provided to acquire good burial properties and to form uniform tungsten plugs regardless of the difference of depth between contact holes by using a selective tungsten deposition and a blanket tungsten deposition together. CONSTITUTION: A semiconductor substrate(1) with a conductive pattern(2) is provided. An insulating layer(3) with a first contact hole(4) for exposing the conductive pattern and a second contact hole(4a) for exposing selectively the substrate is formed thereon. A first and second tungsten plugs(5,5a) are partially filled in the first and second contact holes by using a selective tungsten deposition. An adhesive layer(6) is formed along the entire surface of the resultant structure. A tungsten film is formed on the adhesive layer by using a blanket tungsten deposition. A third and fourth tungsten plug(7a,7b) are completely filled in the first and second contact holes by performing CMP(Chemical Mechanical Polishing) on the tungsten film.