METHOD OF FORMING HIGH DIELECTRIC LAYER USING ATOMIC LAYER DEPOSITION METHOD AND METHOD OF MANUFACTURING CAPACITOR HAVING HIGH DIELECTRIC LAYER FOR IMPROVING LEAKAGE CURRENT CHARACTERISTICS BY REDUCING DEFECTS IN HIGH DIELECTRIC LAYER

摘要

PURPOSE: A method of forming a high dielectric layer using an atomic layer deposition method and a method of manufacturing a capacitor having the high dielectric layer are provided to improve leakage current characteristics by reducing defects in the high dielectric layer. CONSTITUTION: A precursor including metal elements is supplied and a purging process is performed. An oxidizing agent is supplied and a purging process is performed. A reaction source including a nitrogen element is supplied and a purging process is performed. The precursor including metal elements is formed with an Hf precursor and a high dielectric layer is formed with an HfON layer.