| 摘要 |
Provided is a method of manufacturing a flash memory device, comprising the steps of; forming an undoped first poly silicon film on a semiconductor substrate; forming an undoped second poly silicon film having a high concentration doping area on the first poly silicon film; and forming a dielectric film on the resultant structure, so that doping concentrations of the first poly silicon film and the second poly silicon film come to be similar. Accordingly, the first poly silicon film and the second poly silicon film constituting the floating gate electrode have the same doping concentration, and therefore, it is possible to form the dielectric film having an effective thickness by minimizing a growth of a native oxide film on the resultant structure at the time of forming the dielectric film.
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