| 摘要 |
Disclosed is a method for forming a metal wiring capable of preventing a bridge phenomenon between metal wirings by removing metal by-products created during a metal wiring etching process. The method includes the steps of providing a semiconductor substrate formed with an insulation layer having a conductive plug, forming a metal layer including first Ti/TiN layer, an Al layer, and a second Ti/TiN layer, which are sequentially deposited, on an entire surface of the semiconductor substrate, forming a hard mask layer on the metal layer, forming a photosensitive film pattern having a predetermined shape on the hard mask layer such that the photosensitive film pattern covers at least the conductive plug and a part corresponding to the conductive plug, primarily etching the hard mask layer by using the photosensitive film pattern as a mask, secondarily etching the metal layer by using the photosensitive film pattern and a remaining hard mask layer as an etching mask, thereby forming the metal wiring, and removing the photosensitive film pattern. A margin of the photosensitive film is ensured due to the hard mask layer including a TEOS layer, and an over-etching process is sufficiently carried out, so that the metal by-products are easily removed and the bridge phenomenon is not created between metal wirings.
|
