发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.
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申请公布号 |
US2005006637(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030743006 |
申请日期 |
2003.12.23 |
申请人 |
IINUMA TOSHIHIKO;MIZUSHIMA ICHIRO;IZUHA MITSUAKI;MIYANO KIYOTAKA;SUGURO KYOICHI |
发明人 |
IINUMA TOSHIHIKO;MIZUSHIMA ICHIRO;IZUHA MITSUAKI;MIYANO KIYOTAKA;SUGURO KYOICHI |
分类号 |
H01L21/28;H01L21/336;H01L29/165;H01L29/417;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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