| 摘要 |
Embodiments disclosed herein include electronic device designs based upon electronic properties of Group III-N materials and quantum-mechanical effects of specialized heterostructures. Such electronic device designs may include, for example, heterojunction field-effect transistors (HFETs) and high-electron-mobility transistors (HEMTs). The design concepts permit high power, high-frequency, and high-temperature operation of advanced electronic circuits, including devices for radar, collision-avoidance systems, and wireless communications. Designs disclosed may include one or more AlN layers and/or one or more SMASH superlattice barriers combined with one or more n-type delta-doped regions. Alternately, in certain embodiments, one or more AlN layers and one or more SMASH superlattice barriers may be combined without the n-type delta-doped regions. |
