SILOXANE RESIN AND SEMICONDUCTOR INTERLAYER DIELECTRIC LAYER USING THE SAME TO IMPROVE MECHANICAL PROPERTIES, LOW DIELECTRIC PROPERTIES

摘要

PURPOSE: A siloxane resin for a semiconductor interlayer dielectric material using the same is provided to improve mechanical properties and low dielectric properties. CONSTITUTION: The siloxane resin is prepared by carrying out hydrolysis and condensation of at least one monomer selected from a radiation type silane monomer represented by formula 1: Si£(CH2)kSiY1Y2Y3|4 wherein k is an integer of 1-10; Y1, Y2 and Y3 are independently C1-C3 alkyl group, C1-C10 alkoxy group or a halogen atom respectively, and at least one of Y1, Y2 and Y3 is a hydrolysable functional group, and compounds represented by formulas 2 to 4, with an acidic or basic catalyst and water in the presence of an organic solvent, wherein the formula 4 is R3Si(X5X6X7)3 in which R3 is a hydrogen atom, C1-C3 alkyl group or C6-C15 aryl group; X5, X6 and X7 are independently C1-C3 alkyl group, C1-C10 alkoxy group or a halogen atom, respectively, and at least one of X5, X6 and X7 is a hydrolysable functional group.