| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating a semiconductor device, comprising the steps of: forming an element on a silicon substrate; packaging the element; and annealing the packaged element before its transportation or long-term storage.
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| 申请公布号 |
US2005009222(A1) |
申请公布日期 |
2005.01.13 |
| 申请号 |
US20040498373 |
申请日期 |
2004.09.09 |
| 申请人 |
ASHIDA TSUTOMU |
发明人 |
ASHIDA TSUTOMU |
| 分类号 |
H01L27/148;H01L21/02;H01L21/324;(IPC1-7):H01L21/00;H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L27/148 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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