THIN FILM PATTERNING METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO MINIMIZE LOSS OF THIN FILM AND SUBSTRATE AND INCREASE OF SPACE CD

摘要

PURPOSE: A thin film patterning method for fabricating a semiconductor device is provided to minimize a loss of a thin film and a substrate and an increase of a space CD(critical dimension) by etching an organic ARC(anti-reflective coating) by etch gas including HBr. CONSTITUTION: A thin film(34) is formed on a silicon substrate(32). An organic ARC(35) is formed on the thin film. Photoresist patterns(36) with a predetermined space CD are formed on the organic ARC without distorting the pattern. Only the organic ARC is etched without damaging an underlying layer by a plasma etch process in which the photoresist patterns are used as an etch mask and etch gas(38) using HBr is used. The exposed thin film is etched without varying the space CD by an etch process in which the photoresist patterns are used as an etch mask and fluorocarbon gas is used.