| 摘要 |
The invention provides a chemical-mechanical polishing process for polishing the surface of a semiconductor wafer, which comprises the steps of separately preparing a chemical agent and an abrasive agent, combining them into an abrasive slurry at the beginning of the polishing procedure or at the platen end, and polishing the metal layer on the surface of the semiconductor wafer with said admixed abrasive slurry. The invention further provides a chemical-mechanical polishing slurry for polishing the surface of a semiconductor wafer, characterized by being prepared by the steps of separately preparing a chemical agent and an abrasive agent and then combining them at the beginning of the polishing procedure or at the platen end, wherein said chemical agent comprises an aqueous medium, a corrosion inhibitor, and an ionic surfactant, and said abrasive agent comprises abrasive particles and deionized water.
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