| 摘要 |
A compact switching device for applications in integrated circuits is disclosed. The switching device comprises a P-type conductive channel and an N-type conductive channel, both formed on a very-thin semiconductor film. A lightly doped portion in each of said conductive channels is controlled by a single gate electrode formed on a dielectric layer above the channel regions. These lightly doped portions are designed to provide an enhanced conductive state by accumulating majority carriers at the surface, and a non-conductive state by fully depleting majority carriers from the entire thin-film thickness from the single gate electrode provided. Both gate electrodes are coupled to a common input, and both drain nodes are coupled to a common output. Design parameters are optimized to provide complementary devices side-by-side on a single geometry of the thin film, merged at the common drain node.
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