INTEGRATED CIRCUIT HAVING PAIRS OF PARALLEL COMPLEMENTARY FINFETS

摘要

A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which includes a first fin (100), and a second-type of FinFET which includes a second fin (102) running parallel to the first fin (100). The invention also has an insulator fin positioned between the source/drain regions (130) of the first first-type of FinFET and the second-type of FinFET. The insulator fin has approximately the same width dimensions as the first fin (100) and the second fin (102), such that the spacing between the first-type of FinFET and the second-type of FinFET is approximately equal to the width of one fin. The invention also has a common gate (106) formed over channel regions of the first-type of FinFET and the second-type of FinFET. The gate (106) includes a first impurity doping region adjacent the first-type of FinFET and a second impurity doping region adjacent the second-type of FinFET. The differences between the first impurity doping region and the second impurity doping region provide the gate with different work functions related to differences between the first-type of FinFET and the second-type of FinFET. The first fin (100) and the second fin (102) have approximately the same width.