| 发明名称 |
METHOD FOR GROWING THIN NITRIDE FILM ONTO SUBSTRATE AND THIN NITRIDE FILM DEVICE |
| 摘要 |
<p>A method for growing a thin nitride film onto a substrate, wherein a Ga face (2) for growing in +c face on a c face sapphire (Al2O3) substrate (1) and a N face (3) for growing in -c face on the c face sapphire (Al2O3) substrate are formed; and a thin nitride film device prepared by using the method. The method allows the direction of the polarity of a thin nitride film to be controlled in a low temperature process.</p> |
| 申请公布号 |
WO2005004213(A1) |
申请公布日期 |
2005.01.13 |
| 申请号 |
WO2004JP08351 |
申请日期 |
2004.06.15 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;SUMIYA, MASATOMO;FUKE, SHUNRO |
发明人 |
SUMIYA, MASATOMO;FUKE, SHUNRO |
| 分类号 |
C30B25/02;C30B25/18;C30B29/40;H01L21/205;H01L33/16;H01L33/32;(IPC1-7):H01L21/205;H01L33/00 |
主分类号 |
C30B25/02 |
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