| 摘要 |
PROBLEM TO BE SOLVED: To realize higher performance by reducing a parasitic capacitance between source/drain regions positioned below a gate electrode and the gate electrode. SOLUTION: A semiconductor device comprises: a semiconductor substrate 11, channel regions 27a, 27b formed on a surface of the substrate 11; first source/drain regions 20, 21 formed on the surface of the substrate 11 to be separated by the channel regions 27a, 27b; second source/drain regions 22, 23 formed between the channel regions 27a, 27b and the first source/drain regions 20, 21; and a gate insulating film 15 formed on the channel regions 27a, 27b and the second source/drain regions 22, 23. The semiconductor device further has: an insulating film 18 formed on the second source/drain regions 22, 23; gate electrodes 25a, 25b made of only a metal silicide and formed on the gate insulating film 15 and the insulating film 18; and metal silicide films 26a, 26b formed on the first source/drain regions 20, 21. COPYRIGHT: (C)2005,JPO&NCIPI
|
