发明名称 METHOD OF FABRICATING DIELECTRIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a dielectric element, prevented from the degradation of the reliability and yield, due to the deposition of conductive material onto a dielectric film and the sidewalls of a mask. SOLUTION: The method includes steps of, while rotating a dielectric element 200 provided with an ferrodielectric capacitor made up of a lower electrode 12, a ferrodielectric film 13 and an upper electrode 14, irradiating the surface of the upper electrode 14 with ions i through a mask 19 in an oblique direction at an angle in the range 0°<α<90°, and patterning the upper electrode 14 and the ferrodielectric film 13 by means of etching. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005012230(A) 申请公布日期 2005.01.13
申请号 JP20040205514 申请日期 2004.07.13
申请人 SANYO ELECTRIC CO LTD 发明人 GOTO TAKASHI;YAMANO KOJI;TAKAHASHI SEIICHIRO
分类号 H01L21/3065;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L21/306;H01L21/824 主分类号 H01L21/3065
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