METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride substrate having a low dislocation density and a semiconductor device manufactured by the method. SOLUTION: In the method for manufacturing a group III nitride substrate, a group III element and nitrogen are reacted in an alkali metal solution in an atmosphere including nitrogen to generate and grow a crystal, a plurality of parts of a group III nitride semiconductor layer prepared in advance are selected as at least one of seed crystals for the generation and growth of a group III nitride crystal, and the surface of the seed crystal is made to come into contact with the solution. COPYRIGHT: (C)2005,JPO&NCIPI