| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element, a thin film magnetic head, a head gimbal assembly and a hard disk device, in which a magnetization fixing force of a pined layer is high, and a high magnetoresistance variation rate is realized. SOLUTION: A thin film magnetic head 10 comprises: an antiferromagnetic layer 36; a pined layer 45 which is exchange-connected with the antiferromagnetic layer to fix a direction of magnetization, and also has a first ferromagnetic layer 43 coming into contact with the antiferromagnetic layer, a second ferromagnetic layer 41 in which the direction of magnetization is inverted to that of the first ferromagnetic layer and a nonmagnetic spacer layer 42 arranged between the first ferromagnetic layer and the second ferromagnetic layer; a free layer 34; and an intermediate layer 35 provided between the pined layer and the free layer. The first ferromagnetic layer 43 of the pined layer has: a first layer 43b composed of a ferromagnetic material; and a second layer 43a arranged between the first layer and the nonmagnetic spacer layer 42 and composed of a ferromagnetic material. A bulk dispersion coefficient of the first layer 43b is lower than that of the second layer 43a. COPYRIGHT: (C)2005,JPO&NCIPI
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