发明名称 Void-free damascene copper deposition process and means of monitoring thereof
摘要 An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
申请公布号 US2005006242(A1) 申请公布日期 2005.01.13
申请号 US20030615794 申请日期 2003.07.10
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDRICACOS PANAYOTIS;CHUNG DEAN S.;DELIGIANNI HARIKLIA;FLUEGEL JAMES E.;KWIETNIAK KEITH T.;LOCKE PETER S.;RESTAINO DARRYL D.;SEO SOON-CHEON;VEREECKEN PHILIPPE M.;WALTON ERICK G.
分类号 C23C18/16;C25D21/12;C25D21/18;(IPC1-7):C25D21/12 主分类号 C23C18/16
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