FORMING CARBON NANOTUBES AT LOWER TEMPERATURES SUITABLE FOR ELECTRON-EMITTING DEVICE, AND ASSOCIATED FABRICATION METHOD

摘要

An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electronemissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 °C to 500 °C compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface arda for growing the electronemissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.