发明名称 HIGH FREQUENCY AMPLIFYING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a large-sized high frequency amplifying device having high power efficiency for preventing oscillation. SOLUTION: The high frequency amplifying device comprises a semiconductor substrate 11, a plurality of high frequency amplifying elements 12 provided on the semiconductor substrate 11 and amplifying a high frequency signal, an output main signal wiring 105 for inputting and outputting the high frequency signal, and a plurality of pieces of output branch signal wiring 107 for connecting the edge part 106 of the output main signal wiring 105 to each high frequency amplifying element 12 respectively. The lengths of each output branch signal wiring 107 are substantially equal. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005012086(A) 申请公布日期 2005.01.13
申请号 JP20030176526 申请日期 2003.06.20
申请人 TOSHIBA CORP 发明人 SHIBATA KIYOHIRO
分类号 H01L21/822;H01L27/04;H01L27/095;H03F3/195;(IPC1-7):H01L27/095 主分类号 H01L21/822
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