| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a transparent conductive laminate having no problem of a rise in a resistance value by forming an SiO<SB>2</SB>film on a substrate comprising an organic polymer molded article from an Si metal target by a reactive sputtering method and forming a transparent conductive film, especially a transparent conductive film based on In-Sn-O on the SiO<SB>2</SB>film as a thin film with a thickness of 15-50 nm. SOLUTION: In forming the SiO<SB>2</SB>film on the substrate comprising the organic polymer molded article from the Si metal target by the reactive sputtering method, the SiO<SB>2</SB>film is formed while introducing water into a film forming chamber along with a sputtering gas and an oxygen gas so that water partial pressure becomes 5×10<SP>-4</SP>-5.0×10<SP>-3</SP>Pa. Subsequently, the transparent conductive film, especially the transparent conductive film, which is based on In-Sn-O, with a film thickness of 15-50 nm is formed on the SiO<SB>2</SB>film to manufacture the transparent conductive laminate. COPYRIGHT: (C)2005,JPO&NCIPI
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