| 发明名称 |
Production of relaxed semiconductor layer on semiconductor substrate used in production of high frequency circuits comprises roughening surface of substrate by dry etching, and forming semiconductor layer on surface |
| 摘要 |
<p>Production of a relaxed semiconductor layer on a semiconductor substrate comprises preparing the substrate with a surface, roughening the surface of the substrate by dry etching to form a roughened surface, and forming the semiconductor layer on the roughened surface.</p> |
| 申请公布号 |
DE10325549(A1) |
申请公布日期 |
2005.01.13 |
| 申请号 |
DE2003125549 |
申请日期 |
2003.06.05 |
| 申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
HACKER, ERWIN |
| 分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L21/3065;H01L21/322;(IPC1-7):H01L21/20;H01L21/306 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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