METHOD OF FORMING LOW-PERMITTIVITY INSULATION FILM OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE USING THE METHOD AND LOW-PERMITTIVITY INSULATION FILM FORMING DEVICE

摘要

An insulation film in a semiconductor device which is cured in a short time with a low permittivity maintained. A coating film consisting of a porous MSQ is formed on a substrate, the porous MSQ-formed substrate is placed in a vacuum container, a high-density plasma processing is performed at a low electron temperature by microwave excitation using a plasma substrate processing device to thereby cause an inter-molecular dehydrated condensation reaction by a hydroxyl group in a molecule constituting the porous MSQ and a hydroxyl group in another molecule and bond molecules, whereby a cured insulation film is produced with a low permittivity maintained.