| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor the electrodes of which are selectively formed. SOLUTION: The thin film transistor 10 is provided with a semiconductor layer 22, a gate insulation film 21, a gate electrode 20, a source electrode 23, and a drain electrode 24 on the precondition that the thin film transistor 10 is provided above an organic resin layer 15 which a substrate 14 to be processed includes. The gate electrode 20 is provided with: a seed layer 31 formed by reducing at least parts of selectively introduced metal ions to at least part of the organic resin layer 15, and provided to the substrate 14 to be processed in a way of including an exposed part exposed from the organic resin layer 15; and a metallic layer 32 provided to at least part on the seed layer 31. COPYRIGHT: (C)2005,JPO&NCIPI |
