| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming the gate electrode of a semiconductor device, which avoids deterioration in the device characteristics by forming the vertical profile of the gate electrode. SOLUTION: This method includes steps of: sequentially forming a polysilicon film and a metal silicide film on a semiconductor substrate; performing an annealing process so that the metal silicide film is crystallized and that the etching rate of the crystallized metal silicide film becomes similar to that of the polysilicon film; and forming a gate electrode by etching the crystallized metal silicide film and the polysilicon film in a single etching process through utilization of the etching rate being similar between the crystallized metal silicide film and the polysilicon film. COPYRIGHT: (C)2005,JPO&NCIPI
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