| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents the occurrence of a characteristic fluctuation of a semiconductor device due to a fact that contamination components attached to the back of a semiconductor substrate in forming a ferroelectric film spread in the semiconductor substrate. SOLUTION: After the ferroelectric film is formed on the semiconductor substrate by using a CVD method, the back of the semiconductor substrate is substrate-etched down to a specific depth by using a mixed solution of a nitric acid and a fluoric acid, to remove the contamination components included in the back of the semiconductor substrate. Thus, even if the contamination components attached to the back surface of the semiconductor substrate in forming a ferroelectric film spread in the back of the semiconductor substrate as the spread region is removed, it is possible to prevent the occurrence of the characteristic fluctuation of the semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
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