发明名称 |
Method of manufacturing semiconductor device and method of cleaning plasma etching apparatus used therefor |
摘要 |
A method of manufacturing a semiconductor device according to an aspect of the present invention includes: forming a low-k dielectric film above a semiconductor substrate; forming a resist pattern above the low-k dielectric film; etching the low-k dielectric film using the resist pattern as a mask; and stripping the resist pattern by plasma processing using ammonium ions.
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申请公布号 |
US2005009356(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040843508 |
申请日期 |
2004.05.12 |
申请人 |
KOJIMA AKIHIRO;OHUCHI JUNKO;HAYASHI HISATAKA |
发明人 |
KOJIMA AKIHIRO;OHUCHI JUNKO;HAYASHI HISATAKA |
分类号 |
G03F7/42;H01L21/027;H01L21/3065;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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