| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce contact resistance and parasitic resistance of a semiconductor device. <P>SOLUTION: An ohmic contact forming region 13 is irradiated with electron beams 15 from above a gallium nitride (GaN) semiconductor layer 12 formed on base metal substrate sapphire 11. In a region irradiated with the electron beams 15, chemical bond of Ga and N is cut by high energy of the electron beams and thermal energy of current. An electron beam inducing defect region 16 formed of a crystal defect and residual Ga is generated in GaN crystal with an N hole as a center. In the defect region 16, the N hole operates as an impurity level contributed to electron supply. Concentration of the electrons in the contact forming region 13 is raised, and residual Ga shows a metallic feature. Thus, resistance in the contact forming region 13 is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
